Whenever someone decides to learn electronics, the first question that comes to his mind may be – “Where shall I begin?“. I would say, one shall begin at a junction the “pn junction“.
We know semiconductor devices like transistors and diodes are the basic
building units of any equipment that involves electronics, say tablet
computers to the sophisticated MRI machines! How these basic units like
transistors and diodes are formed ? or how are they made ? The answer
lies in understanding “PN Junction”. A PN junction is the basic building block of many semiconductor devices like diodes and transistors.
Note:- I have written
an interesting article which tells the story behind invention &
discovery of PN Junction diode. If you like to read the story, follow
here:- Story behind Invention & Discovery of PN Junction
How a PN Junction is formed?
Now you might have got an idea about why
researchers have arrived at making two types of extrinsic
semiconductors – p-type (which can accept electrons) and n-type (which
can donate electrons). Lets see what all interesting phenomena happen
when we form a junction using a p-type and n-type semiconductor.
Industrially there are several different
ways to make a pn junction. For the ease of understanding, I will
explain it in a simple sentence. We usually make it using a single wafer
of Si or Ge. This means, we first convert a silicon (pure, intrinsic)
wafer to a p-type semiconductor by doping it with a trivalent impurity
(Boron or Indium) on one side. Then we dope this p-type semiconductor
with a pentavalent impurity (Phosphorous or Arsenic or Antimony ) to
form an n-type region on the same wafer. Thus we have made a p-type and
n-type semiconductor on the same wafer, resulting in formation of a
junction (between p-type and n-type semiconductors) on the same silicon
wafer.
What all phenomena occurs during formation of a PN junction?
Three important phenomena occurs during formation of pn junction; as explained below.
Note:- While reading take a look at the picture given below frequently. It will help you to understand concepts quickly and better.
1) Diffusion 2) Formation of space charge 3) Drift
How diffusion occurs ?
In an n-type semiconductor, the majority
carriers are negative charge carriers or electrons. In a p-type
semiconductor, majority carriers are holes or positive charges. When a
junction is formed in a silicon wafer by doping, a concentration
gradient occurs between p-type and n-type materials. This results in
electrons moving from n side to p side and holes moving from p side to n
side through the junction (call it as “initial movement“).
When an electron leaves the n-side region, it leaves behind an ionised
donor (a positive charge ) at the n-side. Similarly when a hole is
diffused to n-side, it leaves behind an ionised acceptor
(a negative charge) at the p-side. This movement of electrons from
n-side to p-side (n–>p) and the movement of holes from p-side to
n-side is called (p–>n) “diffusion” and it results in a current named as “diffusion current“.
How space charge formation occurs ?
We have seen that an electron moving
from n to p (n–>p) leaves behind a positive charge at the n-side of
the junction. Similarly a hole moving from p-side to n-side (p–>n)
leaves behind a negative charge at the p-side of the junction. When more
and more electrons leaves the n-region & more and more holes leaves
the p-region, a region of positive and negative charges is formed at
the junction. Positive charges get accumulated near the n-side junction
and negative charges get accumulated near the p-side junction. This
region is known as “depletion” region. It has been named so because the region is formed by the “initial movement” of electrons and holes, where they “depleted” their original positions leaving behind +ve and -ve charges at the junction.
How drift occurs?
We have seen that there is a layer of
-ve charges accumulated at the p-side of junction and a layer of +ve
charges accumulated at the n-side of the junction. This results in the formation of an electric field
directed from positive charge to negative charge. This electric field
causes electrons to move from p side to n side (p–>n) and the holes
to move from n side to p side (n–>p). This motion of charge carriers
due to electric field is known as “drift” The current
resulting from the flow of electrons and holes due to this electric
field (generated by depletion region) is known as “drift current”. If you observe carefully, you can easily see that drift current is opposite in direction to the diffusion current.
The formation of PN Junction
As we have understood the concepts of
diffusion, depletion region and drift, lets find out how the formation
of PN junction gets completed. Can you guess which one out of the 3
processes (diffusion, drift and depletion region) occur first? Its obviously “diffusion”.
It is because of the diffusion of charge carriers across the junction,
there forms a “depletion” region at the junction. And the depletion
region results in formation of an “electric field” and this electric
field results in “drift”. So initially “diffusion current” will be the
highest and drift current will be very small. Gradually as the
“depletion region” formation continues, drift current builds up and
diffusion current falls down. There comes a particular point of time,
when diffusion current is exactly equal and opposite to drift current
and the junction comes to a state of equilibrium. At this state, there is no “net current” and hence the formation of pn junction is complete.
How the equilibrium at PN junction is maintained?
We have come upto the point of formation of a complete PN junction and we learned how it reached equilibrium. How do you think the equilibrium is maintained?
Well, lets do a quick rewind again. We have seen that electrons have
moved from n-side to p-side (n–>p) during diffusion. So the n-region
has lost its electrons, where as p-side has gained electrons. If we
compare this, we can see that, n-region is positively charged (due to
loss of electrons) compared to p-region (which is negatively charged due
to gain of electrons). This results in a “potential difference” across the n-region and p-region at the junction. At the state of “equilibrium“,
this potential difference reaches a particular state that it prevents
any further flow of electrons from n-side to p-side. Talking in other
way, we need to overcome this potential difference by using an external
energy source (say a battery) to move any one more electron from n-side
to p-side. If we there is no influence of external energy, the formed pn
junction (kept alone) wont be able to overcome this potential
difference by itself and hence it remains at the state of “equilibrium”
with zero net current. This potential difference is called “barrier potential“. It is called so, because it raises a “barrier” to the further movement of electrons from n-side to p-side.
Here you may find a good video with
animation, which explains the formation of pn junction. You do watch
this video. It will help you to grasp concepts behind pn junction even
better.
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